Diagnostic techniques for polycrystalline thin film growth

Kuan Lun Cheng*, Huang-Chung Cheng, Tri Rung Yew

*Corresponding author for this work

Research output: Contribution to journalConference article


This paper represents the results of in-situ and ex-situ diagnostic techniques to realize the role of reaction species to optimize growth parameters and subsequently control the morphology and the grain size of polycrystalline Si and SiC films grown on Si at very low temperatures (165-300°C) in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system. The reaction gases for Si and SiC deposition are SiH4/H2 and SiH4/CH4/H2, respectively. The reaction species are in-situ monitored by quadruple mass spectrum and optical spectrum analyzers. Ex-situ analyses of SiC and Si thin films include cross-sectional transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy to inspect the structural properties.

Original languageEnglish
Pages (from-to)157-162
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1 Jan 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 27 Nov 199530 Nov 1995

Fingerprint Dive into the research topics of 'Diagnostic techniques for polycrystalline thin film growth'. Together they form a unique fingerprint.

  • Cite this