This paper represents the results of in-situ and ex-situ diagnostic techniques to realize the role of reaction species to optimize growth parameters and subsequently control the morphology and the grain size of polycrystalline Si and SiC films grown on Si at very low temperatures (165-300°C) in an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system. The reaction gases for Si and SiC deposition are SiH4/H2 and SiH4/CH4/H2, respectively. The reaction species are in-situ monitored by quadruple mass spectrum and optical spectrum analyzers. Ex-situ analyses of SiC and Si thin films include cross-sectional transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy to inspect the structural properties.
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA|
Duration: 27 Nov 1995 → 30 Nov 1995