Device structural effects on negative-capacitance FETs

Pin Su, Wei Xiang You

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper discusses several device structural effects on negative-capacitance FETs (NCFETs) with emphasis on the wide-range average subthreshold swing. We point out and explain the intrinsic difference between SOI and double-gate 2D NCFETs. The impact of drain coupling on the NC effect and its implication on the design of short-channel NC-FinFETs are also addressed.

Original languageEnglish
Title of host publication2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538676264
DOIs
StatePublished - 11 Feb 2019
Event2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 - Burlingame, United States
Duration: 15 Oct 201818 Oct 2018

Publication series

Name2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018

Conference

Conference2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018
CountryUnited States
CityBurlingame
Period15/10/1818/10/18

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