Device simulation and design optimization for diamond based insulated-gate bipolar transistors

Haitao Ye*, Niall Tumilty, David Garner, Richard B. Jackman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A diamond based insulated gate bipolar transistor is incorporated into a two -dimensional device simulator (MEDICI) to examine the current gain (β) and potential distribution across the device. Initially, work has focused on an important component of IGBT structure, the PNP bipolar transistor, which has been simulated and is reported upon in this paper. Empirical parameters for emitter and collector regions were used. Various carrier concentrations for base region were used to optimize the simulation. It was found that decreasing the thickness of base region leads to an increase in current gain. A buffer layer is needed to prevent the punch-through at low carrier concentration in the base region. Various approaches of increasing the current gain are also discussed in this paper.

Original languageEnglish
Title of host publicationDiamond Electronics-Fundamentals to Applications
Pages275-280
Number of pages6
StatePublished - 2007
Event2006 MRS Fall Meeting - Boston, MA, United States
Duration: 27 Nov 20061 Dec 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume956
ISSN (Print)0272-9172

Conference

Conference2006 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period27/11/061/12/06

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