Device modeling of ferroelectric memory field-effect transistor (FeMFET)

Hang Ting Lue*, Chien Jang Wu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

100 Scopus citations

Abstract

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of the ferroelectric material. In order to provide a more accurate simulation, we incorporate the combined effects of the nonsaturated polarization of ferroelectric layers and the nonuniform distributions of electric field and charge along the channel. We also discuss the possible nonideal effects due to the fixed charges, charge injection, and short channel. The present theoretical work provides some new design rules for improving the performance of FeMFETs.

Original languageEnglish
Article number1036089
Pages (from-to)1790-1798
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume49
Issue number10
DOIs
StatePublished - 1 Oct 2002

Keywords

  • Ferroelectric
  • Ferroelectric memory field-effect transistors (FeMFET)
  • Ferroelectric random access memory (FeRAM)
  • Memory
  • Metal-ferroelectric-insulator-semiconductor (MFIS)
  • Metal-ferroelectric-metal-insulator-semiconductor (MFMIS)
  • Modeling
  • One transistor (1T)
  • Transistor

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