Device design issues for a high-performance bipolar technology with Si or SiGe epitaxial base

J. N. Burghartz*, J. D. Cressler, K. A. Jenkins, J. Y.C. Sun, J. M.C. Stork, J. H. Comfort, T. A. Brunner, C. L. Stanis

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Design issues for a high-performance bipolar technology with Si or SiGe epitaxial base are discussed. Narrow and shallow polysilicon emitter formation and extrinsic base design for low base resistance are investigated using selective epitaxy emitter window (SEEW) transistors. In spite of a close proximity of the extrinsic base diffusion to the intrinsic device a cut-off frequency (fτ) up to 50 GHz has been achieved for an emitter width of 0.35 μm. The depth of the extrinsic base diffusion did affect the collector-base capacitance and indicated that the extrinsic base should be designed in a manner consistent with the circuit operating current density. Further, we discuss in detail the emitter window tolerance for SEEW formation.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsM. Ilegems, M. Dutoit
PublisherIEEE Computer Society
Pages11-14
Number of pages4
ISBN (Electronic)0444890661
StatePublished - 1991
Event21st European Solid State Device Research Conference, ESSDERC 1991 - Montreux, Switzerland
Duration: 16 Sep 199119 Sep 1991

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference21st European Solid State Device Research Conference, ESSDERC 1991
CountrySwitzerland
CityMontreux
Period16/09/9119/09/91

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