Device characteristics of TSV-based piezoelectric resonator with load capacitance and static capacitance modification

Jian Yu Shih, Yen Chi Chen, Chih Hung Chiu, Chung Lun Lo, Chi Chung Chang, Kuan-Neng Chen

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The piezoelectric resonator device based on 3-D integration technologies and hermetic sealing bonding is presented with conventional semiconductor process. To pursue small form factor, high-performance, and cost-effective technologies, this through-silicon via (TSV)-based resonator is fabricated by CuSn eutectic bonding for hermeticity, wafer-level thinning, and Cu TSVs interconnection, while high-temperature cofired ceramic (HTCC) with metal lid is applied in the conventional resonator devices. The device characteristics and reliability of TSV-based resonator reveal it has great performance and outstanding quality. In addition, the device characteristics with load capacitance and its improvement through modification of the isolation in TSV-based substrate are discussed in this research. Demonstrations of these characteristics show that the TSV-based resonator possesses advantages and compatibility with current semiconductor process, as well as the manufacturability compared with the conventional metal lid with HTCC enclosures.

Original languageEnglish
Article number7008505
Pages (from-to)927-933
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number3
DOIs
StatePublished - 1 Jan 2015

Keywords

  • 3-D integration
  • piezoelectric resonator device
  • through-silicon via (TSV).

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