Device characteristics of polysilicon thin-film transistors fabricated by electroless plating Ni-induced crystallization of amorphous Si

Chi Wei Chao*, Yew-Chuhg Wu, Gau Ren Hu, Ming Shian Feng

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Compared with conventional solid phase crystallized (SPC) thin-film transistors (TFTs), metal-induced laterally crystallized (MILC) TFTs exhibit significantly enhanced performance. Metal films are usually deposited by the physical vapor deposition (PVD) method, which is time-consuming and expensive in terms of equipment cost. In this work, a simpler electroless plating Ni was introduced to replace PVD Ni. It was found that the morphologies and the device characteristics of Ni-induced lateral crystallization TFT were as good as those of PVD Ni-induced lateral crystallization TFT.

Original languageEnglish
Pages (from-to)1556-1559
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 A
DOIs
StatePublished - 1 Apr 2003

Keywords

  • Electroless plating and physical vapor deposition
  • Metal-induced lateral crystallization
  • Solid phase crystallization
  • Thin-film transistor

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