Device characteristics of mosfets in MeV implanted substrates

Hans P. Zappe*, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The operating characteristics of MOS transistors constructed in substrates subject to MeV ion implantation have been studied. A standard CMOS process was modified to include high-energy implantation in order to produce a buried layer for device isolation. The process included various high energy implant energies and CMOS well depths. It was seen that device behavior of MOSFETs in the substrate were virtually unaffected by the MeV implantation; channel surface mobility, transconductance and threshold voltage were unchanged. Some variations in body effect parameter and output resistance were noted. Further studies of the CMOS well behavior indicated an increase in well/substrate leakage currents as MeV implanted buried-layer depths decreased.

Original languageEnglish
Pages (from-to)163-167
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Volume21
Issue number1-4
DOIs
StatePublished - 1 Jan 1987

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