Device breakdown optimization of Al2O3/GaN MISFETs

X. Kang, D. Wellekens, M. Van Hove, B. De Jaeger, N. Ronchi, Tian-Li Wu, S. You, B. Bakeroot, J. Hu, D. Marcon, S. Stoffels, S. Decoutere

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations


In this paper we demonstrate a solution to achieve robust enhancement-mode Al2O3/GaN MISFETs with a high breakdown voltage and suggest a possible model for the device off-state breakdown. It is found that the device breakdown exhibits different gate voltage dependence for different surface treatments before the gate dielectric deposition. The device performance is greatly improved by using an in-situ surface plasma treatment. The improved device performance is explained by a reduction of traps at the Al2O3/GaN interface, which finally leads to a reduction in the amount of trapped positive charges and associated with that a reduction of the effective electric field across the gate dielectric when the device is in off-state. Several experimental results support this hypothesis: (1) The recoverable negative threshold voltage shift after reverse gate bias depends on the interface clean before gate dielectric deposition, (2) The reverse bias gate dielectric breakdown voltage is improved by this interface plasma treatment, although the forward bias gate dielectric breakdown voltage is identical.

Original languageEnglish
Title of host publication2016 International Reliability Physics Symposium, IRPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467391368
StatePublished - 22 Sep 2016
Event2016 International Reliability Physics Symposium, IRPS 2016 - Pasadena, United States
Duration: 17 Apr 201621 Apr 2016

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026


Conference2016 International Reliability Physics Symposium, IRPS 2016
CountryUnited States


  • ALD AlO
  • Breakdown
  • E-Mode
  • GaN
  • NBTI

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