Device and reliability of high-K Al2O3 gate dielectric with good mobility and low Dit

Albert Chin*, C. C. Liao, C. H. Lu, W. J. Chen, C. Tsai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

112 Scopus citations


We report a very simple process to fabricate Al2O3 gate dielectric with K (9.0 to 9.8) greater than Si3N4. Al2O3 is formed by direct oxidation from thermally evaporated Al. The 48 angstrom Al2O3 has approx. 7 orders lower leakage current than equivalent 21 angstrom SiO2. Good Al2O3/Si interface was evidenced by the low interface density of 1×1011 eV cm-2 and compatible electron mobility with thermal SiO2. Good reliability is measured from the small SILC after 2.5 V stress for 10,000s.

Original languageEnglish
Pages (from-to)135-136
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1999
EventProceedings of the 1999 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 14 Jun 199916 Jun 1999

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