Device and Circuit Simulation of Anomalous DX Trap Effects in DCFL and SCFL HEMT Inverters

Ta-Hui Wang, Sheng Jyh Wu, Chimoon Huang

Research output: Contribution to journalArticlepeer-review

Abstract

An integrated device and circuit analysis has been developed to evaluate the DX trap induced anomalous transient phenomena in DCFL and SCFL AlGaAs/GaAs HEMT inverters. The slow transient effect and the hysteretic characteristics of the input-output voltage transfer function in the inverters are simulated. The result shows that in comparison with the DCFL inverter, the DX trap effects are much improved in the SCFL inverter due to its particular operational principle.

Original languageEnglish
Pages (from-to)1758-1761
Number of pages4
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume12
Issue number11
DOIs
StatePublished - 1 Jan 1993

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