Development of stable micro-crystalline silicon AMLCD

Chan Ching Chang*, Chih Hsien Chen, Ya Hui Peng, Yeong Shyang Lee, Chih Yuan Hou, Kun Fu Huang, Houg Tao Shih, Fan Shin Tseng, Ming Ta Hsieh, Jenn-Fang Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

Bottom-gate microcrystalline silicon thin film transistors (μc-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.

Original languageEnglish
Pages1921-1923
Number of pages3
StatePublished - 1 Dec 2007
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 5 Dec 20075 Dec 2007

Conference

Conference14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period5/12/075/12/07

Keywords

  • Amorphous silicon and defect
  • High mobility
  • Micro-crystalline
  • TFTLCD

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