Development of post-annealing method for flexible oxide TFTs application

Chur Shyang Fuh, Po-Tsun Liu*, Li Feng Teng, Yang Shun Fan, Chih Hsiang Chang, Yu Ta Wu, Sih Wei Huang, Han Ping D. Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Microwave annealing was used instead of furnace annealing to post-treat a nitridated amorphous InGaZnO thin film transistor (a-IGZO:N TFT), and obviously improved its electrical performance and reliability. This performance of a-IGZO:N TFT with microwave annealing process of 300s is well competitive with its counterpart with furnace annealing at 350°C for 1 hr. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for flexible oxide TFTs application.

Original languageEnglish
Pages (from-to)1026-1028
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume44
Issue number1
DOIs
StatePublished - 1 Jan 2013

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