Development of high speed 850 nm vcsels for oc-192 application

Hao-Chung Kuo*, Y. S. Chang, T. H. Hseuh, F. Y. Lai, S. C. Wang

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, high performance 850nm InGaAsP/InGaP strain-compensated vertical-cavity surface-emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25°C to 85°C. In addition, we design the single transverse mode operation of low threshold current (Ith) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10Gb/s VCSELs under continuous-wave operation by employing oxygen implantation, MOCVD re-growth and selective oxidation.

Original languageEnglish
Pages26-32
Number of pages7
StatePublished - 1 Dec 2003
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 12 Oct 200317 Oct 2003

Conference

ConferenceState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period12/10/0317/10/03

Fingerprint Dive into the research topics of 'Development of high speed 850 nm vcsels for oc-192 application'. Together they form a unique fingerprint.

Cite this