In this paper, high performance 850nm InGaAsP/InGaP strain-compensated vertical-cavity surface-emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25°C to 85°C. In addition, we design the single transverse mode operation of low threshold current (Ith) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10Gb/s VCSELs under continuous-wave operation by employing oxygen implantation, MOCVD re-growth and selective oxidation.
|Number of pages||7|
|State||Published - 1 Dec 2003|
|Event||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States|
Duration: 12 Oct 2003 → 17 Oct 2003
|Conference||State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium|
|Period||12/10/03 → 17/10/03|