Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

Edward Yi Chang, Hai Dang Trinh, Yueh Chin Lin, Hiroshi Iwai, Yen Ku Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

III-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Original languageEnglish
Title of host publicationCompound Semiconductors
Subtitle of host publicationThin-Film Photovoltaics, LEDs, and Smart Energy Controls
Pages291-302
Number of pages12
DOIs
StatePublished - 12 Dec 2013
Event2013 MRS Spring Meeting - San Francisco, CA, United States
Duration: 1 Apr 20135 Apr 2013

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1538
ISSN (Print)0272-9172

Conference

Conference2013 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period1/04/135/04/13

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