Development of GaN-based vertical-cavity surface-emitting lasers

Tien-chang Lu*, Jun Rong Chen, Shih Wei Chen, Hao-Chung Kuo, Chien Cheng Kuo, Cheng Chung Lee, Shing Chung Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaN-based VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7° with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 -2 was measured.

Original languageEnglish
Article number4781784
Pages (from-to)850-860
Number of pages11
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number3
DOIs
StatePublished - 1 May 2009

Keywords

  • Distributed Bragg reflector (DBR)
  • Electrical pumping
  • GaN
  • Superlattice
  • Vertical-cavity surface-emitting laser (VCSEL)

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