Development of FET-type reference electrodes for pH-ISFET applications

Kow-Ming Chang*, Chih Tien Chang, Kuo Yi Chao, Jin Li Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

A reference field effect transistor (FET) fabrication method by using a perfluorosulfonated proton exchange membrane associated with ion-insensitive polymers is proposed. The single-layer film of the perfluorosulfonated polymer/photoresist composite among the eight films tested demonstrated the best performance of 5.8 mV/pH and 11.27 mV/pNa sensitivities. Meanwhile, the drift performances were 3.5 mV/h and less than 1 mV/h for the first and second 4 h tests. A high sensitivity of 52.1 mV/pH and a low interference of 4.61 mV/pNa were obtained in the range of pH 1-13 through the differential arrangement with ZrO2 gate ion-sensitive field-effect transistors (ISFETs). Meanwhile, the transconductance match of the proposed reference FET/ISFET pair would simplify the differential readout circuits.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number5
DOIs
StatePublished - 27 Apr 2010

Fingerprint Dive into the research topics of 'Development of FET-type reference electrodes for pH-ISFET applications'. Together they form a unique fingerprint.

  • Cite this