Development and investigation of ultra-thin buffer layers used in symmetric Cu/Sn bonding and asymmetric Cu/Sn-Cu bonding for advanced 3D integration applications

Hsiu Chi Chen, Yi Tung Kho, Yen Jun Huang, Yu Sheng Hsieh, Yao Jen Chang, Ya Sheng Tang, Ting Yang Yu, Kuan-Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, a particular ultra-thin buffer layer (UBL) with various thickness ranging from 10 nm to 100 nm and different materials including Co, Ni, Pd and Ti is inserted between Cu/Sn to delay the interdiffusion prior to eutectic bonding. The efficacy of the buffer layer and the bonding quality are systematically conferred using microstructure imaging, material analysis, and electrical performance. In addition to symmetric Cu/Sn bonding with UBL, an asymmetric Cu/Sn-Cu bonding which is proposed to relieve the heat-enhanced interdiffusion issues thereby enhancing the reliability performance is demonstrated with the assistance of UBL technology.

Original languageEnglish
Title of host publicationIMPACT 2017 - 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference, Proceedings
PublisherIEEE Computer Society
Pages85-88
Number of pages4
ISBN (Electronic)9781538647196
DOIs
StatePublished - 12 Jan 2018
Event12th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2017 - Taipei, Taiwan
Duration: 25 Oct 201727 Oct 2017

Publication series

NameProceedings of Technical Papers - International Microsystems, Packaging, Assembly, and Circuits Technology Conference, IMPACT
Volume2017-October
ISSN (Print)2150-5934
ISSN (Electronic)2150-5942

Conference

Conference12th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2017
CountryTaiwan
CityTaipei
Period25/10/1727/10/17

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