Development and Fabrication of AlGaInP-Based Flip-Chip Micro-LEDs

Ray-Hua Horng*, Huan Yu Chien, Ken Yen Chen, Wei Yu Tseng, Yu Ting Tsai, Fu Gow Tarntair

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations


The fabrication of AlGaInP-based flip-chip micro light-emitting-diodes (LED; emitting area: 4.5 mil ×5 mil) with horizontal electrodes is reported in this paper. The thickness of the epitaxial layer of the thin LED structure was reduced to 50% of that of the traditional thick LED, whereas carrier concentration in the n-type GaAs contact layer was increased to 5 × 10-18 cm-3 to meet the Ohmic contact requirement. At a current injection of 5 mA, the thin LED exhibited a forward voltage, output power, and external quantum efficiency of 1.8 V, 1.9 mW, and 19%, respectively. The optoelectronic performance of the thin LED was as good as that of the traditional thick red LED. The technique proposed by this paper can be used to integrate AlGaInP-based LEDs with nitride LEDs for full-color display applications.

Original languageEnglish
Pages (from-to)475-479
Number of pages5
JournalIEEE Journal of the Electron Devices Society
StatePublished - 5 Apr 2018


  • Flip-chip
  • light-emitting diodes
  • micro-LED

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