Deuterium effect on stress-induced leakage current

Bo Chun Lin*, Yih Chung Cheng, Albert Chin, Ta-Hui Wang, Chun Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We have studied and compared stress-induced leakage current in oxides subjected to H2 and D2 annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D2 ambient compared to that annealed in H2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.

Original languageEnglish
Pages (from-to)2337-2340
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - 1 Dec 1999


  • Annealing
  • Deuterium
  • SILC
  • Stress-induced leakage current
  • Ultra thin oxide

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