We have studied and compared stress-induced leakage current in oxides subjected to H2 and D2 annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D2 ambient compared to that annealed in H2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|State||Published - 1 Dec 1999|
- Stress-induced leakage current
- Ultra thin oxide