Deuterium effect on stress-induced leakage current

Bo Chun Lin; Yih Chung Cheng; Albert Chin; Ta-Hui Wang; Chun Tsai

doi:10.1143/JJAP.38.2337

Deuterium effect on stress-induced leakage current

Bo Chun Lin^*, Yih Chung Cheng, Albert Chin, Ta-Hui Wang, Chun Tsai

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have studied and compared stress-induced leakage current in oxides subjected to H₂ and D₂ annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D₂ ambient compared to that annealed in H₂. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiO_x layer.

Original language	English
Pages (from-to)	2337-2340
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.38.2337
State	Published - 1 Dec 1999

Keywords

Annealing
Deuterium
SILC
Stress-induced leakage current
Ultra thin oxide

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@article{e87d73e753b34f67bfa60ad69de3f6e7,

title = "Deuterium effect on stress-induced leakage current",

abstract = "We have studied and compared stress-induced leakage current in oxides subjected to H2 and D2 annealing. There is not much difference in stress-induced leakage current between thick 70-{\AA}-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-{\AA}-thick oxides annealed in D2 ambient compared to that annealed in H2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.",

keywords = "Annealing, Deuterium, SILC, Stress-induced leakage current, Ultra thin oxide",

author = "Lin, {Bo Chun} and Cheng, {Yih Chung} and Albert Chin and Ta-Hui Wang and Chun Tsai",

year = "1999",

month = dec,

day = "1",

doi = "10.1143/JJAP.38.2337",

language = "English",

volume = "38",

pages = "2337--2340",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

TY - JOUR

T1 - Deuterium effect on stress-induced leakage current

AU - Lin, Bo Chun

AU - Cheng, Yih Chung

AU - Chin, Albert

AU - Wang, Ta-Hui

AU - Tsai, Chun

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We have studied and compared stress-induced leakage current in oxides subjected to H2 and D2 annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D2 ambient compared to that annealed in H2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.

AB - We have studied and compared stress-induced leakage current in oxides subjected to H2 and D2 annealing. There is not much difference in stress-induced leakage current between thick 70-Å-oxides annealed by these two isotopes. In sharp contrast, an improvement of several-fold in stress-induced leakage current is observed in 27-Å-thick oxides annealed in D2 ambient compared to that annealed in H2. The significant improvement in this direct-tunneling oxide may be due to the passivation of intrinsic defects and dangling bonds in a transition SiOx layer.

KW - Annealing

KW - Deuterium

KW - SILC

KW - Stress-induced leakage current

KW - Ultra thin oxide

UR - http://www.scopus.com/inward/record.url?scp=0000822588&partnerID=8YFLogxK

U2 - 10.1143/JJAP.38.2337

DO - 10.1143/JJAP.38.2337

M3 - Article

AN - SCOPUS:0000822588

VL - 38

SP - 2337

EP - 2340

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 B

ER -