Determination of Nonuniform Diffusion Length and Electric Field in Semiconductors

Chen-Ming Hu

doi:10.1109/T-ED.1978.19178

Determination of Nonuniform Diffusion Length and Electric Field in Semiconductors

Chen-Ming Hu^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A method is proposed that purports to measure the nonuniform diffusion length L(x) in the presence of an arbitrary electric field Ex(x). A point source of carrier generation (as a model for an electron beam) scans across the sample in the thickness direction x while the induced currents are measured at two reverse-biased junctions sandwiching the sample. L(x) and (Exnp +Dp)/Dp can be de duced from the currents. If only one collecting junction is present, one of the two functions may be deduced provided that the other is known; in addition, the surface recombination velocity at the other boundaty may be determined in the presence of arbitrary L(x) and Ex(x). With additional scanning in the y and z directions, quasi three-dimensior al mapping is possible.

Original language	English
Pages (from-to)	822-825
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	25
Issue number	7
DOIs	https://doi.org/10.1109/T-ED.1978.19178
State	Published - 1 Jan 1978

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abstract = "A method is proposed that purports to measure the nonuniform diffusion length L(x) in the presence of an arbitrary electric field Ex(x). A point source of carrier generation (as a model for an electron beam) scans across the sample in the thickness direction x while the induced currents are measured at two reverse-biased junctions sandwiching the sample. L(x) and (Exnp +Dp)/Dp can be de duced from the currents. If only one collecting junction is present, one of the two functions may be deduced provided that the other is known; in addition, the surface recombination velocity at the other boundaty may be determined in the presence of arbitrary L(x) and Ex(x). With additional scanning in the y and z directions, quasi three-dimensior al mapping is possible.",

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