Determination of metal/Si contact temperature during electrical current stressing

C. N. Liao, O. J. Chen, King-Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.

Original languageEnglish
Title of host publicationProceedings ICT 2002
Subtitle of host publication21st International Conference on Thermoelectrics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages345-348
Number of pages4
ISBN (Electronic)0780376838
DOIs
StatePublished - 1 Jan 2002
Event21st International Conference on Thermoelectrics, ICT 2002 - Long Beach, United States
Duration: 25 Aug 200229 Aug 2002

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings
Volume2002-January

Conference

Conference21st International Conference on Thermoelectrics, ICT 2002
CountryUnited States
CityLong Beach
Period25/08/0229/08/02

Fingerprint Dive into the research topics of 'Determination of metal/Si contact temperature during electrical current stressing'. Together they form a unique fingerprint.

Cite this