Determination of metal/Si contact temperature during electrical current stressing

C. N. Liao, O. J. Chen, King-Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.

Original languageEnglish
Title of host publicationProceedings ICT 2002
Subtitle of host publication21st International Conference on Thermoelectrics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780376838
StatePublished - 1 Jan 2002
Event21st International Conference on Thermoelectrics, ICT 2002 - Long Beach, United States
Duration: 25 Aug 200229 Aug 2002

Publication series

NameInternational Conference on Thermoelectrics, ICT, Proceedings


Conference21st International Conference on Thermoelectrics, ICT 2002
CountryUnited States
CityLong Beach

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