Interconnect reliability of very-large-scale-integrated (VLSI) circuits is a temperature-sensitive issue. However, it is extremely difficult to measure the temperature at a tiny contact using conventional methods. In this study a method of measuring contact temperature under electrical current stressing is devised using typical Kelvin test structures together with our special designed Seebeck coefficient test structures. The Ni/Si contacts on both p∗-Si and n+-Si with a contact size of 10 × 10 μm2 were examined using this method. When applying a current density of 104 A/cm2 through the contacts, the contact temperature is found to increase as much as by 20°C. The influences of substrate temperature and stressing current on the Ni/Si contact resistance are also discussed.