Determination of grain boundary barrier height and interface states by a focused laser beam

E. Poon*, E. S. Yang, H. L. Evans, Wei Hwang, R. M. Osgood

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

An experimental technique has been developed to study the electrical properties of semiconductor grain boundaries (GB's) by a focused laser beam. The laser beam is trained on a GB while the photoconductivity of the sample is measured. This technique allows us to examine a localized region of an individual GB in semiconductors with multiple grains. The measurement of the steady state and transient signals as a function of temperature determines the grain boundary barrier height, trap energy, and capture cross section.

Original languageEnglish
Pages (from-to)285-287
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number3
DOIs
StatePublished - 1 Dec 1983

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