Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor

Horng-Chih Lin; Ming Hsien Lee; Kuan Lin Yeh; Tiao Yuan Huang

doi:10.1149/1.1996512

Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor

Horng-Chih Lin^*, Ming Hsien Lee, Kuan Lin Yeh, Tiao Yuan Huang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We demonstrate that it is possible to extract the defect density distribution within the entire energy gap of a poly-Si layer by using a novel Schottky barrier thin-film transistor test structure. Our methodology, albeit based on the well-known field-effect conductance method, does not require two separate n- and p-channel test devices necessary in the conventional methods. This unique and much simplified single-test-device feature is made possible thanks to the ambipolar characteristics and the suppression of sub-threshold leakage current in the new test scheme. Effects of process treatments such as plasma hydrogenation could also be clearly resolved using the new test structure.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	9
DOIs	https://doi.org/10.1149/1.1996512
State	Published - 29 Sep 2005

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AU - Lin, Horng-Chih

AU - Lee, Ming Hsien

AU - Yeh, Kuan Lin

AU - Huang, Tiao Yuan

PY - 2005/9/29

Y1 - 2005/9/29

N2 - We demonstrate that it is possible to extract the defect density distribution within the entire energy gap of a poly-Si layer by using a novel Schottky barrier thin-film transistor test structure. Our methodology, albeit based on the well-known field-effect conductance method, does not require two separate n- and p-channel test devices necessary in the conventional methods. This unique and much simplified single-test-device feature is made possible thanks to the ambipolar characteristics and the suppression of sub-threshold leakage current in the new test scheme. Effects of process treatments such as plasma hydrogenation could also be clearly resolved using the new test structure.

AB - We demonstrate that it is possible to extract the defect density distribution within the entire energy gap of a poly-Si layer by using a novel Schottky barrier thin-film transistor test structure. Our methodology, albeit based on the well-known field-effect conductance method, does not require two separate n- and p-channel test devices necessary in the conventional methods. This unique and much simplified single-test-device feature is made possible thanks to the ambipolar characteristics and the suppression of sub-threshold leakage current in the new test scheme. Effects of process treatments such as plasma hydrogenation could also be clearly resolved using the new test structure.

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JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 9

ER -

Determination of effective density-of-states using a novel Schottky barrier poly-Si thin-film transistor

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