Determination of contact and intrinsic nanowire resistivity in two-contact ZnO nanowire devices

Y. F. Lin, Wen-Bin Jian*, Z. Y. Wu, F. R. Chen, J. J. Kai, Juhn-Jong Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Cylindrical ZnO nanowires were synthesized to fabricate two-contact ZnO nanowire devices with the same separation distance between the two contact electrodes. Electrical properties including temperature dependence of resistance and I-V curves were recorded. According to distinct electrical behaviors and room-temperature resistance, ZnO nanowire devices can be categorized into three different types exhibiting either contact or intrinsic NW attributes.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages1112-1115
Number of pages4
DOIs
StatePublished - Mar 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 Mar 200827 Mar 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period24/03/0827/03/08

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