Detecting stability faults in sub-threshold SRAMs

Chen Wei Lin*, Hao Yu Yang, Chin Yuan Huang, Hung Hsin Chen, Chia-Tso Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Detecting stability faults has been a crucial task and a hot research topic for the testing of conventional super-threshold 6T SRAM in the past. When lowering the supply voltage of SRAM to the subthreshold region, the impact of stability faults may significantly change, and hence the test methods developed in the past for detecting stability faults may no longer be effective. In this paper, we first categorize the subthreshold-SRAM designs into different types according to their bit-cell structures. Based on each type, we then analyze the difference of its stability faults compared to the conventional super-threshold 6T SRAM, and discuss how the stability-fault test methods should be modified accordingly. A series of experiments are conducted to validate the effectiveness of each stability-fault test method for different types of subthreshold-SRAM designs.

Original languageEnglish
Title of host publication2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011
Pages28-33
Number of pages6
DOIs
StatePublished - 1 Dec 2011
Event2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011 - San Jose, CA, United States
Duration: 7 Nov 201110 Nov 2011

Publication series

NameIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
ISSN (Print)1092-3152

Conference

Conference2011 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2011
CountryUnited States
CitySan Jose, CA
Period7/11/1110/11/11

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