Detailed characterization of a systematic set of quantum dot infrared photodetectors

H. C. Liu; B. Aslan; M. Korkusinski; Shun-Jen Cheng; P. Hawrylak

doi:10.1016/S1350-4495(03)00167-1

Detailed characterization of a systematic set of quantum dot infrared photodetectors

H. C. Liu^*, B. Aslan, M. Korkusinski, Shun-Jen Cheng, P. Hawrylak

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

18 Scopus citations

Abstract

The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated.

Original language	English
Pages (from-to)	503-508
Number of pages	6
Journal	Infrared Physics and Technology
Volume	44
Issue number	5-6
DOIs	https://doi.org/10.1016/S1350-4495(03)00167-1
State	Published - 21 Oct 2003

Keywords

Infrared photodetectors
Polarization
Quantum dots

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10.1016/S1350-4495(03)00167-1

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Liu, H. C., Aslan, B., Korkusinski, M., Cheng, S-J., & Hawrylak, P. (2003). Detailed characterization of a systematic set of quantum dot infrared photodetectors. Infrared Physics and Technology, 44(5-6), 503-508. https://doi.org/10.1016/S1350-4495(03)00167-1

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abstract = "The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated.",

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AU - Aslan, B.

AU - Korkusinski, M.

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AU - Hawrylak, P.

PY - 2003/10/21

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N2 - The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated.

AB - The results of a detailed characterization study on a systematic set of InAs/GaAs self-assembled quantum dot infrared photodetectors are presented. A simple physical picture is also discussed to account for the main observed features. Photoresponse characteristics in a wide spectral region from the mid- to far-infrared are reported. Clear polarization behaviors with a dominant P-polarized response in the mid-infrared and a strong S-response in the far-infrared regions are shown. These behaviors can be qualitatively understood in view of the quantum dot shape of a large in-plane diameter and a small height in the growth direction. With a set of three samples, effects of the number of electrons per quantum dot on the spectra are investigated.

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