Designer germanium quantum dot phototransistor for near infrared optical detection and amplification

Ming Hao Kuo, Wei Ting Lai, Tzyy Min Hsu, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated a novel CMOS approach for the fabrication of high-performance germanium quantum dot (QD) phototransistor (PT) offering great promises as optical switches and transducers for Si-based optical interconnects. Illumination produces significant enhancement in the drain current of Ge QD PTs when biased at both on-and off-states, primarily resulting from photoconductive and photovoltaic effects. Measured photocurrent to dark current ratio (I ph /I dark ) and photoresponsivities from the Ge QD PT were as high as 53,000 and 2.7 A/W, respectively, under incident power of 0.9mW at 850 nm illumination.

Original languageEnglish
Title of host publication2014 Silicon Nanoelectronics Workshop, SNW 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479956777
DOIs
StatePublished - 4 Dec 2015
EventSilicon Nanoelectronics Workshop, SNW 2014 - Honolulu, United States
Duration: 8 Jun 20149 Jun 2014

Publication series

Name2014 Silicon Nanoelectronics Workshop, SNW 2014

Conference

ConferenceSilicon Nanoelectronics Workshop, SNW 2014
CountryUnited States
CityHonolulu
Period8/06/149/06/14

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