Designer Ge quantum dots Coulomb blockade thermometry

I. H. Chen; C. C. Wang; Pei-Wen Li

doi:10.1109/VLSI-TSA.2014.6839670

Designer Ge quantum dots Coulomb blockade thermometry

I. H. Chen, C. C. Wang, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (G_D) dips up to temperature 120K. The full-width-at-half minimum, V_1/2, of the G_D dips directly scale with temperature following the material parameter-independent equation of eV_1/2 ∼ 5.44k_BT, providing the primary thermometric quantity. Also the depths of the G_D dips increases with 1/k _BT as expected from CB theory of ΔG_D/G_D0 = E_C/6k_BT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839670
State	Published - 1 Jan 2014
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan Duration: 28 Apr 2014 → 30 Apr 2014

Publication series

Name	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country	Taiwan
City	Hsinchu
Period	28/04/14 → 30/04/14

Access to Document

10.1109/VLSI-TSA.2014.6839670

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Chen, I. H., Wang, C. C., & Li, P-W. (2014). Designer Ge quantum dots Coulomb blockade thermometry. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839670] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839670

Chen, I. H. ; Wang, C. C. ; Li, Pei-Wen. / Designer Ge quantum dots Coulomb blockade thermometry. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

@inproceedings{230eef26c5e043b9b12f0aa0849e835d,

title = "Designer Ge quantum dots Coulomb blockade thermometry",

abstract = "A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.",

author = "Chen, {I. H.} and Wang, {C. C.} and Pei-Wen Li",

year = "2014",

month = jan,

day = "1",

doi = "10.1109/VLSI-TSA.2014.6839670",

language = "English",

isbn = "9781479922178",

series = "Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014",

publisher = "IEEE Computer Society",

booktitle = "Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014",

note = "null ; Conference date: 28-04-2014 Through 30-04-2014",

}

Chen, IH, Wang, CC & Li, P-W 2014, Designer Ge quantum dots Coulomb blockade thermometry. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014., 6839670, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, IEEE Computer Society, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, 28/04/14. https://doi.org/10.1109/VLSI-TSA.2014.6839670

Designer Ge quantum dots Coulomb blockade thermometry. / Chen, I. H.; Wang, C. C.; Li, Pei-Wen.

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. 6839670 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Designer Ge quantum dots Coulomb blockade thermometry

AU - Chen, I. H.

AU - Wang, C. C.

AU - Li, Pei-Wen

PY - 2014/1/1

Y1 - 2014/1/1

N2 - A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

AB - A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

UR - http://www.scopus.com/inward/record.url?scp=84904170621&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA.2014.6839670

DO - 10.1109/VLSI-TSA.2014.6839670

M3 - Conference contribution

AN - SCOPUS:84904170621

SN - 9781479922178

T3 - Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

BT - Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

PB - IEEE Computer Society

Y2 - 28 April 2014 through 30 April 2014

ER -

Chen IH, Wang CC, Li P-W. Designer Ge quantum dots Coulomb blockade thermometry. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society. 2014. 6839670. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). https://doi.org/10.1109/VLSI-TSA.2014.6839670