Designer Ge quantum dots Coulomb blockade thermometry

I. H. Chen, C. C. Wang, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

Original languageEnglish
Title of host publicationProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
PublisherIEEE Computer Society
ISBN (Print)9781479922178
DOIs
StatePublished - 1 Jan 2014
Event2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan
Duration: 28 Apr 201430 Apr 2014

Publication series

NameProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
CountryTaiwan
CityHsinchu
Period28/04/1430/04/14

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    Chen, I. H., Wang, C. C., & Li, P-W. (2014). Designer Ge quantum dots Coulomb blockade thermometry. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839670] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839670