Designer Ge quantum dots Coulomb blockade thermometry

I. H. Chen; C. C. Wang; Pei-Wen Li

doi:10.1109/VLSI-TSA.2014.6839670

Designer Ge quantum dots Coulomb blockade thermometry

I. H. Chen, C. C. Wang, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (G_D) dips up to temperature 120K. The full-width-at-half minimum, V_1/2, of the G_D dips directly scale with temperature following the material parameter-independent equation of eV_1/2 ∼ 5.44k_BT, providing the primary thermometric quantity. Also the depths of the G_D dips increases with 1/k _BT as expected from CB theory of ΔG_D/G_D0 = E_C/6k_BT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

Original language	English
Title of host publication	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Publisher	IEEE Computer Society
ISBN (Print)	9781479922178
DOIs	https://doi.org/10.1109/VLSI-TSA.2014.6839670
State	Published - 1 Jan 2014
Event	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 - Hsinchu, Taiwan Duration: 28 Apr 2014 → 30 Apr 2014

Publication series

Name	Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014

Conference

Conference	2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014
Country	Taiwan
City	Hsinchu
Period	28/04/14 → 30/04/14

Access to Document

10.1109/VLSI-TSA.2014.6839670

Link to publication in Scopus

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Chen, I. H., Wang, C. C., & Li, P-W. (2014). Designer Ge quantum dots Coulomb blockade thermometry. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014 [6839670] (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). IEEE Computer Society. https://doi.org/10.1109/VLSI-TSA.2014.6839670

Chen, I. H. ; Wang, C. C. ; Li, Pei-Wen. / Designer Ge quantum dots Coulomb blockade thermometry. Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

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title = "Designer Ge quantum dots Coulomb blockade thermometry",

abstract = "A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.",

author = "Chen, {I. H.} and Wang, {C. C.} and Pei-Wen Li",

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Chen, IH, Wang, CC & Li, P-W 2014, Designer Ge quantum dots Coulomb blockade thermometry. in Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014., 6839670, Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, IEEE Computer Society, 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014, Hsinchu, Taiwan, 28/04/14. https://doi.org/10.1109/VLSI-TSA.2014.6839670

Designer Ge quantum dots Coulomb blockade thermometry. / Chen, I. H.; Wang, C. C.; Li, Pei-Wen.

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society, 2014. 6839670 (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A Coulomb blockade (CB) thermometer has been experimentally demonstrated based on the temperature dependence of a Ge quantum-dot (QD) single-hole transistor (SHT). The Ge-QD SHT features distinctive current peaks/plateaus, sharp differential conductance (GD) dips up to temperature 120K. The full-width-at-half minimum, V1/2, of the GD dips directly scale with temperature following the material parameter-independent equation of eV1/2 ∼ 5.44kBT, providing the primary thermometric quantity. Also the depths of the GD dips increases with 1/k BT as expected from CB theory of ΔGD/GD0 = EC/6kBT. This experimental demonstration indicates that our Ge-QD SHT offers an effective building block for ultrasensitive CB primary thermometers with the detection temperature as high as 115K.

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Chen IH, Wang CC, Li P-W. Designer Ge quantum dots Coulomb blockade thermometry. In Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014. IEEE Computer Society. 2014. 6839670. (Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2014). https://doi.org/10.1109/VLSI-TSA.2014.6839670