Designer Ge quantum-dot phototransistors for highly-integrated, broadband optical interconnects

Ming Hao Kuo, Chung Yen Chien, Po Hsiang Liao, Wei Ting Lai, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report high-responsivity Ge quantum dots (QDs) MOS phototransistors as on-chip transducers for highly-integrated, broadband Si-based optical interconnects. Self-organized heterostructure of Ge-QD/SiO2/Si-channel is fabricated in a single step through selective oxidation of SiGe nano-pillars over a Si3N4 buffer layer on Si substrates. Dark current densities (10-7A/mm2), photocurrent-to-dark current ratio (∼ 107) and photoresponsmties (>10 A/W), external quantum efficiency (∼240%), and response time (1.4ns) are measured on the Ge-QD phototransistors under 850 run illumination. Detection wavelength is tunable from near infrared to near ultraviolet by reducing the QD size from 90 to 7 nm, and the optimal photoresponsmty is tailored by the QD size and effective thickness of gate dielectrics.

Original languageEnglish
Title of host publication7th IEEE International Nanoelectronics Conference 2016, INEC 2016
PublisherIEEE Computer Society
ISBN (Electronic)9781467389693
DOIs
StatePublished - 12 Oct 2016
Event7th IEEE International Nanoelectronics Conference, INEC 2016 - Chengdu, China
Duration: 9 May 201611 May 2016

Publication series

NameProceedings - International NanoElectronics Conference, INEC
Volume2016-October
ISSN (Print)2159-3523

Conference

Conference7th IEEE International Nanoelectronics Conference, INEC 2016
CountryChina
CityChengdu
Period9/05/1611/05/16

Keywords

  • Ge quantum dot
  • optical interconnects
  • phototransistor

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