@inproceedings{b5274ac043ef4fefb33ee9feb327251c,
title = "Designer Ge quantum-dot phototransistors for highly-integrated, broadband optical interconnects",
abstract = "We report high-responsivity Ge quantum dots (QDs) MOS phototransistors as on-chip transducers for highly-integrated, broadband Si-based optical interconnects. Self-organized heterostructure of Ge-QD/SiO2/Si-channel is fabricated in a single step through selective oxidation of SiGe nano-pillars over a Si3N4 buffer layer on Si substrates. Dark current densities (10-7A/mm2), photocurrent-to-dark current ratio (∼ 107) and photoresponsmties (>10 A/W), external quantum efficiency (∼240%), and response time (1.4ns) are measured on the Ge-QD phototransistors under 850 run illumination. Detection wavelength is tunable from near infrared to near ultraviolet by reducing the QD size from 90 to 7 nm, and the optimal photoresponsmty is tailored by the QD size and effective thickness of gate dielectrics.",
keywords = "Ge quantum dot, optical interconnects, phototransistor",
author = "Kuo, {Ming Hao} and Chien, {Chung Yen} and Liao, {Po Hsiang} and Lai, {Wei Ting} and Pei-Wen Li",
year = "2016",
month = oct,
day = "12",
doi = "10.1109/INEC.2016.7589425",
language = "English",
series = "Proceedings - International NanoElectronics Conference, INEC",
publisher = "IEEE Computer Society",
booktitle = "7th IEEE International Nanoelectronics Conference 2016, INEC 2016",
address = "United States",
note = "null ; Conference date: 09-05-2016 Through 11-05-2016",
}