Design techniques for VHF/UHF high-Q tunable bandpass filters using simple CMOS inverter-based transresistance amplifiers

Ping Hsing Lu*, Chung-Yu Wu, Ming Kai Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

In this paper, CMOS inverter-based wideband transresistance Rm amplifiers are proposed and analyzed. Using I the Rm amplifiers, tunable VHF/UHF Rm-C bandpass biquadratic filters can be designed. In these filters, the center frequency fo, can be post-tuned by adjusting the control voltages of the Rm amplifiers. The pseudodifferential configuration uses the extra inversely connected and self-shorted inverters for Q enhancement. Experimental results have shown that the center frequency fo of the single-ended-output Rm-C bandpass biquad is 386 MHz (258 MHz) and Q = 1.195 (Q = 1.012) for ± 2.5 V (+1.5 V) supply voltage. The power consumption is 24.83 m W (3.42 mW), and the dynamic range is 61 dB (55.5 dB). For pseudodifferential-output high-Q configuration, the measured quality factor Q can be as high as 360 with fo, = 222.7 MHz. When Q = 94, the power consumption is 56.2 mW and the measured dynamic range is 57.8 dB for ±2.5 V supply voltage.

Original languageEnglish
Pages (from-to)719-725
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume31
Issue number5
DOIs
StatePublished - 1 May 1996

Fingerprint Dive into the research topics of 'Design techniques for VHF/UHF high-Q tunable bandpass filters using simple CMOS inverter-based transresistance amplifiers'. Together they form a unique fingerprint.

Cite this