With the aid of an analytical and scalable model, this paper explores the design space for negative-capacitance (NC) field-effect transistors (FETs) with a 2D semiconducting transition-metal-dichalcogenide channel. In addition, the impact of back-gate biasing on the design space and the body effect of 2D-NCFETs is also investigated. Our study indicates that, to mitigate the conflict between subthreshold swing and hysteresis and to maximize the design space for the 2D-NCFET, a thin buried oxide and an adequate reverse back-gate bias can be applied to achieve the optimum design.
- 2D semiconductors
- back-gate biasing
- ferroelectric FET
- Landau-Khalatnikov (L-K) equation
- molybdenum disulphide (MoS2)
- negative-capacitance field-effect transistor (NCFET)
- transition-metal-dichalcogenide (TMD)