Design space exploration considering back-gate biasing effects for negative-capacitance transition-metal-dichalcogenide (TMD) field-effect transistors

Wei Xiang You, Pin Su

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, with the aid of an analytical and scalable model, we explore the design space for negative-capacitance (NC) FETs with a 2D semiconducting transition-metal-dichalcogenide (TMD) channel with emphasis on the impact of back-gate biasing. Our study indicates that, to mitigate the conflict between subthreshold swing (SS) and hysteresis and to maximize the design space for the NC-TMDFET, a thin buried oxide (BOX) and an adequate reverse back-gate bias can be applied to achieve the optimum design.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages136-137
Number of pages2
ISBN (Electronic)9781509046591
DOIs
StatePublished - 13 Jun 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 28 Feb 20172 Mar 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Conference

Conference2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period28/02/172/03/17

Keywords

  • 2D material
  • Negative-capacitance FET
  • transition-metal-dichalcogenide

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    You, W. X., & Su, P. (2017). Design space exploration considering back-gate biasing effects for negative-capacitance transition-metal-dichalcogenide (TMD) field-effect transistors. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 136-137). [7947540] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947540