Design rule related defects formation

Y. F. Hsieh*, Bing-Yue Tsui

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

Formation of implantation induced tertiary defects is reported to be closely related to the design rule of poly-Si (on field oxide) to active area distance. Leakage current measurements of N + /P-type junctions was used to characterize the defect density of a variety of layout structures. Material analyses were also conducted to reveal the defect natures in Si crystal lattices and occurring probability of dislocations.

Original languageEnglish
Pages (from-to)1871-1880
Number of pages10
JournalMicroelectronics Reliability
Volume38
Issue number12
DOIs
StatePublished - 1 Jan 1998

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