Design optimization of single-/dual-band FET LNAs using noise transformation matrix

Yu Chih Hsiao, Chin-Chun Meng, Chun Yang

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


This paper describes the design optimization of single- and dual-band inductively source degenerated field-effect transistor low-noise amplifiers (LNAs) using an analytical formula of noise parameters derived through a noise transformation matrix. The dual-band LNA design can be directly expanded from the single-band LNA design using a noise transformation matrix. The derived noise formulas of LNAs reveal that a simultaneous noise and input match (SNIM) can be obtained at a single frequency for a single-band LNA. For a concurrent dual-band LNA, the simultaneous noise match cannot be achieved at two different operating frequencies and thus a balanced design in noise performance is developed using a noise transformation matrix. This paper demonstrates a 5-GHz single-band and a 2.4/5-GHz concurrent dual-band two-stage single-voltage-supply LNA using 0.15- μm depletion-mode pseudomorphic HEMT technology to verify design methodology. The inductively source-degenerated common-source amplifier is applied at the input stage. The 5-GHz common-source common-drain (CS-CD) LNA shows 1.4-dB noise figure (NF) with an SNIM. Moreover, the 2.4/5-GHz CS-CD concurrent dual-band LNA has a balanced noise performance of 2.2-dB NF at 2.4 GHz and 2.0-dB NF at 5 GHz, respectively.

Original languageEnglish
Article number7365490
Pages (from-to)519-532
Number of pages14
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number2
StatePublished - 1 Feb 2016


  • Inductively source-degenerated inductor
  • Low-noise amplifier (LNA)
  • Noise transformation matrix

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