Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering

Tuo-Hung Hou*, Chungho Lee, Venkat Narayanan, Udayan Ganguly, Edwin Chihchuan Kan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

The three-dimensional (3-D) electrostatics together with the modified Wentzel-Kramers-Brillouin tunneling model has been implemented to simulate the programming and retention characteristics of the metal nanocrystal (NC) memories. Good agreements with experimental data are first demonstrated to calibrate the transport parameters. In contrast to previous works, the 3-D electrostatic effects investigated in this paper are proven very significant in the memory operations. Therefore, new design criteria of metal NC memories are investigated. Part I presents the physical model and the NC array design optimization. A sparse and large-size NC array, which is suitable for the one-dimensional narrow-channel memories, provides higher program/erase tunneling current density due to the field-enhancement effect and lower charging energy due to the large NC capacitance. On the other hand, to achieve a sufficient memory window, fast programming speed, and long retention time in the typical two-dimensional channel memories, a dense and large-size NC array is favorable while taking the tradeoff with the NC number density into account. Based on the same theoretical model, the authors continue in Part II to consider the design optimization when high-κ dielectrics can be employed.

Original languageEnglish
Pages (from-to)3095-3102
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume53
Issue number12
DOIs
StatePublished - 1 Dec 2006

Keywords

  • Electrostatics
  • Modeling
  • Nanocrystal (NC)
  • Nonvolatile memories
  • Three dimensional (3-D)

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