Design on the Low-Leakage Diode String for Using in the Power-Rail ESD Clamp Circuits in a 0.35-μm Silicide CMOS Process

Ming-Dou Ker*, Wen Yu Lo

*Corresponding author for this work

Research output: Contribution to journalArticle

43 Scopus citations

Abstract

A new design on the diode string with very low leakage current is proposed for using in the ESD clamp circuits across the power rails. By adding an NMOS-controlled lateral SCR (NCLSCR) device into the stacked diode string, the leakage current of this new diode string with six stacked diodes at 5-V (3.3-V) forward bias can be reduced to only 2.1 (1.07) nA at a temperature of 125°C in a 0.35-μm silicide CMOS process, whereas the previous designs have a leakage current in the order of mA. The total blocking voltage of this new design with NCLSCR can be linearly adjusted by changing the number of the stacked diodes in the diode string without causing latch-up danger across the power rails. From the experimental results, the human-body-model ESD level of the ESD clamp circuit with the proposed low-leakage diode string is greater than 8 kV in a 0.35-μm silicide CMOS process by using neither the ESD-implantation nor the silicide-blocking process modifications.

Original languageEnglish
Pages (from-to)601-611
Number of pages11
JournalIEEE Journal of Solid-State Circuits
Volume35
Issue number4
DOIs
StatePublished - 1 Apr 2000

Keywords

  • Diode string
  • Electrostatic discharge (esd)
  • Esd bus
  • Esd protection circuit
  • Latch-up
  • Leakage current
  • SCR

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