Design on mixed-voltage I/O buffers with slew-rate control in low-voltage CMOS process

Ming-Dou Ker*, Tzu Ming Wang, Fang Ling Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

16 Scopus citations

Abstract

A new design on mixed-voltage I/O buffers with slewrate control but without gate-oxide reliability problem in low-voltage CMOS process is proposed. The proposed circuit can effectively reduce the ground bounce effects without suffering gate-oxide reliability problems and hot-carrier degradation issues. The proposed mixed-voltage I/O buffer with slew-rate control has been designed in a 0.18-μm CMOS process to meet the 1.5-V/3.3-V applications.

Original languageEnglish
Title of host publicationProceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008
Pages1047-1050
Number of pages4
DOIs
StatePublished - 26 Dec 2008
Event15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008 - St. Julian's, Malta
Duration: 31 Aug 20083 Sep 2008

Publication series

NameProceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008

Conference

Conference15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008
CountryMalta
CitySt. Julian's
Period31/08/083/09/08

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