Design of negative charge pump circuit with polysilicon diodes in a 0.25 μm CMOS process

Ming-Dou Ker, Chyh Yih Chang, Hsin Chin Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

A charge pump circuit realized with the substrate-isolated polysilicon diode in the 0.25 μm CMOS process is proposed. With the polysilicon diode, the stable negative voltage generation can be realized in general sub-quarter-micron CMOS process without extra process modification or additional mask layer. The device characteristic of polysilicon diode and the voltage waveforms of the negative charge pump circuit have been successfully verified in a 0.25 μm CMOS process with grounded p-type substrate.

Original languageEnglish
Title of host publication2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages145-148
Number of pages4
ISBN (Electronic)0780373634, 9780780373631
DOIs
StatePublished - 1 Jan 2002
Event3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Taipei, Taiwan
Duration: 6 Aug 20028 Aug 2002

Publication series

Name2002 IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002 - Proceedings

Conference

Conference3rd IEEE Asia-Pacific Conference on ASIC, AP-ASIC 2002
CountryTaiwan
CityTaipei
Period6/08/028/08/02

Keywords

  • Polysilicon diode
  • charge pump circuit

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