Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection

Ming Hao Kuo, Wei Ting Lai, Sheng Wei Lee, Yen Chun Chen, Chia Wei Chang, Wen-Hao Chang, Tzu Min Hsu, Pei-Wen Li*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We demonstrate an effective approach to grow high-quality thin film (>1 μm) of multifold Ge/Si/Ge composite quantum dots (CQDs) stacked heterostructures for near infrared photodetection and optical interconnect applications. An otherwise random, self-assembly of variable-fold Ge/Si CQDs has been grown on Si through the insertion of Si spacer layers to produce micron-scale-thick, stacked Ge/Si CQD layers with desired QD morphology and composition distribution. The high crystalline quality of these multifold Ge CQD heterostructures is evidenced by low dark current density of 3.68 pA/μm2, superior photoresponsivity of 267 and 220 mA/W under 850 and 980 nm illumination, respectively, and very fast temporal response time of 0.24 ns measured on the Ge/Si CQD photodetectors.

Original languageEnglish
Pages (from-to)2401-2404
Number of pages4
JournalOptics Letters
Volume40
Issue number10
DOIs
StatePublished - 1 Jan 2015

Fingerprint Dive into the research topics of 'Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection'. Together they form a unique fingerprint.

Cite this