Design of integrated gate driver with threshold voltage drop cancellation in amorphous silicon technology for TFT-LCD application

Li Wei Chu*, Po-Tsun Liu, Ming-Dou Ker

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

A new integrated gate driver has been successfully designed and fabricated by amorphous silicon (a-Si) technology for a 3.8-in WVGA (800×RGB× 480) TFT-LCD panel. With the proposed threshold voltage drop-cancellation technique, the output rise time of the proposed integrated gate driver can be substantially decreased by 24.6% for high-resolution display application. Moreover, the proposed noise reduction path between the adjacent gate drivers can reduce the layout area for slim bezel display. The transmittance brightness and contrast ratio of the demonstrated 3.8-inch panel show almost no degradation after the 500 h operation under 70 °C and -20 °C conditions.

Original languageEnglish
Article number6052150
Pages (from-to)657-664
Number of pages8
JournalIEEE/OSA Journal of Display Technology
Volume7
Issue number12
DOIs
StatePublished - 31 Oct 2011

Keywords

  • Amorphous silicon (a-Si)
  • gate driver
  • thin-film transistor liquid-crystal display (TFT-LCD)

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