Design of high speed Si/SiGe heterojunction complementary metal-oxide-semiconductor field effect transistors with reduced short-channel effects

Pei-Wen Li*, W. M. Liao

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A planar CMOS Si/SiGe heterostructure is proposed. Simulation results show that Si/SiGe CMOSFETs exhibit enhanced drive current and device speed over bulk Si devices without sacrificing electrostatic integrity. This indicates that Si/SiGe CMOSFETs have a great potential to replace Si MOSFETs in application-specific designs.

Original languageEnglish
Pages (from-to)1030-1033
Number of pages4
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
StatePublished - 1 May 2002

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