Design of FinFET SRAM cells using a statistical compact model

Darsen D. Lu, Chung Hsun Lin, Shijing Yao, Weize Xiong, Florian Bauer, Cloves R. Cleavelin, Ali M. Niknejad, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

13 Scopus citations

Abstract

A study of designing FinFET-based SRAM cells using a compact model is reported. Parameters for a multi-gate FET compact model, BSIM-MG are extracted from fabricated n-type and p-type SOI FinFETs. Local mismatch in gate length and fin width is calibrated to electrical measurements of 378 FinFET SRAM cells. The cell design is re-optimized through Monte Carlo statistical simulations. Variation in readability, writability and static leakage of the cell are studied.

Original languageEnglish
Title of host publicationSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs
StatePublished - 1 Dec 2009
EventSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States
Duration: 9 Sep 200911 Sep 2009

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

ConferenceSISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
CountryUnited States
CitySan Diego, CA
Period9/09/0911/09/09

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