Design of ESD protection for RF CMOS power amplifier with inductor in matching network

Shiang Yu Tsai*, Chun Yu Lin, Li Wei Chu, Ming-Dou Ker

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Due to the potential for mass production, CMOS technologies have been widely used to implement radio-frequency integrated circuits (RF ICs). Electrostatic discharge (ESD), which is one of the most important reliability issues in CMOS technologies, must be considered in RF ICs. In this work, an on-chip ESD protection design for RF power amplifier (PA) was presented. The ESD protection design consisted of an inductor in the matching network of PA. The PA with this ESD protection had been designed and fabricated in a 65-nm CMOS process. The ESD-protected PA can sustain over 4-kV human-body-mode (HBM) ESD stress, while the unprotected PA was degraded after 1-kV HBM ESD stress.

Original languageEnglish
Title of host publication2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
Pages467-470
Number of pages4
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012 - Kaohsiung, Taiwan
Duration: 2 Dec 20125 Dec 2012

Publication series

NameIEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS

Conference

Conference2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012
CountryTaiwan
CityKaohsiung
Period2/12/125/12/12

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    Tsai, S. Y., Lin, C. Y., Chu, L. W., & Ker, M-D. (2012). Design of ESD protection for RF CMOS power amplifier with inductor in matching network. In 2012 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2012 (pp. 467-470). [6419073] (IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS). https://doi.org/10.1109/APCCAS.2012.6419073