Design of ESD protection cell for dual-band RF applications in a 65-nm CMOS process

Li Wei Chu*, Chun Yu Lin, Shiang Yu Tsai, Ming-Dou Ker, Ming Hsiang Song, Chewn Pu Jou, Tse Hua Lu, Jen Chou Tseng, Ming Hsien Tsai, Tsun Lai Hsu, Ping Fang Hung, Tzu Heng Chang, Yu Lin Wei

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An ESD protection cell consisted of a diode, a silicon-controlled rectifier SCR a PMOS, and inductors was proposed for dual-band radio-frequency RFESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.

Original languageEnglish
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
StatePublished - 27 Nov 2012
Event34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012 - Tucson, AZ, United States
Duration: 9 Sep 201214 Sep 2012

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
ISSN (Print)0739-5159

Conference

Conference34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
CountryUnited States
CityTucson, AZ
Period9/09/1214/09/12

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