Design of bi-directional transmission gate driver in amorphous silicon technology for TFT-LCD application

Guang Ting Zheng, Po-Tsun Liu, Meng Chyi Wu, I. Hsiang Lu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A novel bi-directional transmission gate driver circuit integrated by amorphous silicon thin film transistors (a-Si:H TFTs) has been proposed. In the proposed design, the noise suppression structure of the gate driver utilized the AC drive inverter to reduce the degradation of the pull down TFTs. The clock frequency of AC signal is 30 Hz, which could reduce dynamic power consumption of the circuit. In addition, the synchronous controlled method in this research could reduce the amount of device in gate driver. The simulated result shows the good output performance of the gate driver and match the circuit design.

Original languageEnglish
Title of host publicationThin Film Transistors 13, TFT 13
EditorsY. Kuo
PublisherElectrochemical Society Inc.
Pages55-60
Number of pages6
Volume75
Edition10
ISBN (Electronic)9781607685395
DOIs
StatePublished - 1 Jan 2016
EventSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2 Oct 20167 Oct 2016

Publication series

NameECS Transactions
Number10
Volume75
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
CountryUnited States
CityHonolulu
Period2/10/167/10/16

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