Design of bandgap voltage reference circuit with all TFT devices on glass substrate in a 3-μm LTPS process

Ting Chou Lu*, Ming-Dou Ker, Hsiao-Wen Zan, Chung Hung Kuo, Chun Huai Li, Yao Jen Hsieh, Chun Ting Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

A bandgap voltage reference (BGR) circuit designed with the low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) on glass substrate is proposed, which has been successfully verified in a 3-μim LTPS process. The experimental results have shown that the measured temperature coefficient of the new proposed bandgap voltage reference circuit is around 195 ppm/°C under the supply voltage of 10V. The proposed bandgap voltage reference circuit can be applied on precise analog circuits for System-on-Panel (SoP) or System-on-Glass (SoG) applications.

Original languageEnglish
Article number4672188
Pages (from-to)721-724
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 26 Dec 2008
EventIEEE 2008 Custom Integrated Circuits Conference, CICC 2008 - San Jose, CA, United States
Duration: 21 Sep 200824 Sep 2008

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