Design of a CMOS T/R switch with high power capability: Using asymmetric transistors

Szu Ling Liu, Meng Hsiu Wu, Albert Chin

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 μm CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P 1 dB s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.

Original languageEnglish
Article number2227465
Pages (from-to)645-647
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume22
Issue number12
DOIs
StatePublished - 5 Dec 2012

Keywords

  • BV
  • insertion loss
  • isolation
  • power-handling capability

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