Design of a CMOS T/R switch with high power capability: Using asymmetric transistors

Szu Ling Liu; Meng Hsiu Wu; Albert Chin

doi:10.1109/LMWC.2012.2227465

Design of a CMOS T/R switch with high power capability: Using asymmetric transistors

Szu Ling Liu, Meng Hsiu Wu, Albert Chin

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 μm CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P _{1 dB} s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.

Original language	English
Article number	2227465
Pages (from-to)	645-647
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	22
Issue number	12
DOIs	https://doi.org/10.1109/LMWC.2012.2227465
State	Published - 5 Dec 2012

Keywords

BV
insertion loss
isolation
power-handling capability

Access to Document

10.1109/LMWC.2012.2227465

Fingerprint Dive into the research topics of 'Design of a CMOS T/R switch with high power capability: Using asymmetric transistors'. Together they form a unique fingerprint.

Cite this

@article{ee96ad8eb888473c9f571d611bf546af,

title = "Design of a CMOS T/R switch with high power capability: Using asymmetric transistors",

abstract = "A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 μm CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P 1 dB s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.",

keywords = "BV, insertion loss, isolation, power-handling capability",

author = "Liu, {Szu Ling} and Wu, {Meng Hsiu} and Albert Chin",

year = "2012",

month = dec,

day = "5",

doi = "10.1109/LMWC.2012.2227465",

language = "English",

volume = "22",

pages = "645--647",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Design of a CMOS T/R switch with high power capability

T2 - Using asymmetric transistors

AU - Liu, Szu Ling

AU - Wu, Meng Hsiu

AU - Chin, Albert

PY - 2012/12/5

Y1 - 2012/12/5

N2 - A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 μm CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P 1 dB s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.

AB - A single-pole double-throw transmit/receive (T/R) switch has been realized by using both conventional and asymmetric MOSFETs in a standard 0.18 μm CMOS technology. At 2.4 and 5.8 GHz, the asymmetric-transistor based T/R switch shows 2.7 dBm and 2.3 dBm improvements in measured 1 dB compression points (P 1 dB s) than the conventional circuit of the same circuitry and layout, respectively. This switch also has good insertion losses of 0.62/0.7 and 0.94/1.2 dB for transmit-end/receive-end modes at 2.4 and 5.8 GHz, respectively.

KW - BV

KW - insertion loss

KW - isolation

KW - power-handling capability

UR - http://www.scopus.com/inward/record.url?scp=84880393977&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2012.2227465

DO - 10.1109/LMWC.2012.2227465

M3 - Article

AN - SCOPUS:84880393977

VL - 22

SP - 645

EP - 647

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 12

M1 - 2227465

ER -

Design of a CMOS T/R switch with high power capability: Using asymmetric transistors

Abstract

Keywords

Access to Document

Other files and links

Cite this