Design of a 1.8 V 4. 9 ∼ 5.9 GHz CMOS broadband low noise amplifier with 0.28 DB gain flatness using AMER inductor loads

Yin Lung Lu*, Yi Cheng Wu, Kyung Wan Yu, Wei Li Chen, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

A 4.9 ∼ 5.9 GHz broadband LNA, suitable for IEEE 802.11a, HIPERLAN and IEEE 802.11j, is designed and simulated. Using Active Magnetic Energy Recovery (AMER) inductors to boost gain, this broadband AMER LNA exhibits high gain (21.2dB) with good gain flatness (0.28dB) within the 4.9 ∼ 5.9 GHz frequency range. In comparison to the conventional 3-stage LNA, this broadband AMER LNA achieve higher gain, and better gain flatness with the cost of consuming slightly extra current, 0.2 mA, in two AMER inductors. The simulated noise figure lies within 2.2dB and 2.7dB in the frequency range and the IIP3 is +8 dBm. The broadband AMER LNA is designed to meet the requirements for integration of all IEEE 802.1 la, HIPERLAN and IEEE 802.11j.

Original languageEnglish
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
DOIs
StatePublished - 7 Sep 2004
Event2004 IEEE International Symposium on Circuits and Systems - Proceedings - Vancouver, BC, Canada
Duration: 23 May 200426 May 2004

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