Design of 2 V 1 GHz CMOS low-noise bandpass amplifier with good temperature stability and low power dissipation

Chung-Yu Wu*, Jeng Gong, Yu Cheng

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

A 1 GHz low-noise low-power bandpass amplifier suitable for the applications of RF front-end in wireless communication receivers is proposed and analyzed. In this design, novel temperature compensation circuit is used to stabilize the amplifier gain so that the overall amplifier has a good temperature stability. Moreover, the compact tunable positive-feedback circuit is connected to the integrated spiral inductor to generate the negative resistance and enhance its Q value. The simple diode varactor circuit is adopted for center frequency tuning. These two parts of improved circuits can reduce the power dissipation of the amplifier. HSPICE simulation has been extensively performed to verify the performance of the designed bandpass amplifier. It has been shown that the amplifier has a gain of 26 dB at Q = 30 under 2 V power supply with 35 mW power dissipation. The noise figure is 5 dB in the passband. The tunable frequency range is between 950 MHz and 1050 MHz. The gain variation is less than 4 dB in the range of 0 °C to 80 °C. Suitable noise figure and amplifier gain, low power dissipation, and good temperature stability makes the proposed bandpass amplifier quite feasible in RF front-end applications.

Original languageEnglish
Pages153-156
Number of pages4
DOIs
StatePublished - 1 Dec 1998
EventProceedings of the 1998 5th IEEE International Conference on Electronics, Circuits and Systems (ICECS'98) - Surfing the Waves of Science and Technology - Lisboa, Portugal
Duration: 7 Sep 199810 Sep 1998

Conference

ConferenceProceedings of the 1998 5th IEEE International Conference on Electronics, Circuits and Systems (ICECS'98) - Surfing the Waves of Science and Technology
CityLisboa, Portugal
Period7/09/9810/09/98

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